Title :
Filled IrxCo1-xSb3-based skutterudite solid solutions
Author :
Uher, Ctirad ; Shi, Xun ; Kong, Huijun
Author_Institution :
Dept. of Phys., Univ. of Michigan, Ann Arbor, MI
Abstract :
Forming iso-electronic solid solutions is a standard approach to achieving low lattice thermal conductivity in thermoelectric materials. The phase diagram for IrxCo1-xSb3 solid solutions is calculated by ab initio method, and a limited solid solubility is predicted. We were able to prepare pure and filled CoSb3 doped with Ir in single phase form for the doping concentrations x less than 0.15. The samples maintain very good electrical transport properties due to weak charge carrier scattering from the iso-electronic atoms and, at the same time, the lattice thermal conductivity is reduced significantly. A systematic study of the lattice thermal conductivity of IrxCo1-xSb3 was carried out over a broad range of temperatures from 2 K to 800 K. The behavior of the lattice thermal conductivity as a function of the filling fraction and the concentration of Ir is presented. The data indicate that Ir-doped skutterudite solid solutions are good candidates for high temperature thermoelectric applications.
Keywords :
ab initio calculations; antimony alloys; cobalt alloys; doping; doping profiles; iridium alloys; phase diagrams; solid solubility; thermal conductivity; thermoelectricity; IrCoSb3; ab initio method; charge carrier scattering; doping concentrations; electrical transport; filled skutterudite solid solutions; filling fraction; iso-electronic solid solutions; lattice thermal conductivity; phase diagram; solid solubility; temperature 2 K to 800 K; thermoelectric materials; Charge carriers; Conducting materials; Doping; Filling; Lattices; Scattering; Solids; Temperature distribution; Thermal conductivity; Thermoelectricity;
Conference_Titel :
Thermoelectrics, 2007. ICT 2007. 26th International Conference on
Conference_Location :
Jeju Island
Print_ISBN :
978-1-4244-2262-3
Electronic_ISBN :
1094-2734
DOI :
10.1109/ICT.2007.4569455