Microwave power performance of InP-based double heterojunction bipolar transistors for C- and X-band applications

Author

Hafizi, M. ; Macdonald, P.A. ; Liu, T. ; Rensch, D.B. ; Cisco, T.C.

Author_Institution

Hughes Res. Labs., Malibu, CA, USA

fYear

1994

fDate

23-27 May 1994

Firstpage

671

Abstract

We report on the microwave performance of InP-based double heterojunction bipolar transistors (DHBT) for X-band and C-band applications with power cells operating at an output power greater than 2 W. Our power performance characterization indicated a combination of high power density and high efficiency at both 4.5 and 9 GHz. At 4.5 GHz we measured over 2 W output power (4.3 W/mm power density) and a peak power-added-efficiency (PAE) of 60%. AT 9 GHz the peak measured power was over 1 W (5 W/mm) and the peak PAE was 60%. These are the first reports of substantial microwave power performance in this new device technology based on the InP material system.<>

Keywords

III-V semiconductors; heterojunction bipolar transistors; indium compounds; power transistors; solid-state microwave devices; 1 to 2 W; 4.5 to 9 GHz; 60 percent; C-band applications; InP; InP-based DHBT; SHF; X-band applications; double heterojunction bipolar transistors; high efficiency; high power density; microwave power performance; Density measurement; Double heterojunction bipolar transistors; Indium phosphide; Microwave devices; Microwave technology; Power generation; Power measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 1994., IEEE MTT-S International

Conference_Location

San Diego, CA, USA

ISSN

0149-645X

Print_ISBN

0-7803-1778-5

Type

conf

DOI

10.1109/MWSYM.1994.335513

Filename

335513