Title :
Microwave power performance of InP-based double heterojunction bipolar transistors for C- and X-band applications
Author :
Hafizi, M. ; Macdonald, P.A. ; Liu, T. ; Rensch, D.B. ; Cisco, T.C.
Author_Institution :
Hughes Res. Labs., Malibu, CA, USA
Abstract :
We report on the microwave performance of InP-based double heterojunction bipolar transistors (DHBT) for X-band and C-band applications with power cells operating at an output power greater than 2 W. Our power performance characterization indicated a combination of high power density and high efficiency at both 4.5 and 9 GHz. At 4.5 GHz we measured over 2 W output power (4.3 W/mm power density) and a peak power-added-efficiency (PAE) of 60%. AT 9 GHz the peak measured power was over 1 W (5 W/mm) and the peak PAE was 60%. These are the first reports of substantial microwave power performance in this new device technology based on the InP material system.<>
Keywords :
III-V semiconductors; heterojunction bipolar transistors; indium compounds; power transistors; solid-state microwave devices; 1 to 2 W; 4.5 to 9 GHz; 60 percent; C-band applications; InP; InP-based DHBT; SHF; X-band applications; double heterojunction bipolar transistors; high efficiency; high power density; microwave power performance; Density measurement; Double heterojunction bipolar transistors; Indium phosphide; Microwave devices; Microwave technology; Power generation; Power measurement;
Conference_Titel :
Microwave Symposium Digest, 1994., IEEE MTT-S International
Conference_Location :
San Diego, CA, USA
Print_ISBN :
0-7803-1778-5
DOI :
10.1109/MWSYM.1994.335513
