Title :
Thermal CAD for power III-V devices and MMICs
Author :
Bonani, F. ; Ghione, G. ; Pirola, M. ; Naldi, C.U.
Author_Institution :
Dipartimento di Elettronica, Politecnico di Torino, Italy
Abstract :
A CAD approach (using a hybrid finite-element Green´s function strategy) is described for the thermal analysis of GaAs and III-V compound semiconductor devices and integrated circuits. The approach is based on a computationally efficient 3D large-scale thermal simulator allowing for non-linear multilayered and thinned substrates, via holes, and heat conduction through surface metallizations. Simulation examples concerning devices and circuits are discussed to demonstrate the simulator capabilities
Keywords :
Green´s function methods; III-V semiconductors; MMIC; circuit analysis computing; finite element analysis; gallium arsenide; power amplifiers; power integrated circuits; thermal analysis; 3D large-scale thermal simulator; GaAs; III-V compound semiconductor devices; III-V integrated circuits; MESFET power amplifier; MMIC; heat conduction; hybrid finite element-Green´s function method; nonlinear multilayered substrates; power III-V devices; simulation; surface metallizations; thermal CAD; thermal analysis; thinned substrates; via holes; Circuit simulation; Computational modeling; Finite element methods; Gallium arsenide; Green´s function methods; Hybrid integrated circuits; III-V semiconductor materials; Large-scale systems; MMICs; Semiconductor devices;
Conference_Titel :
Microwave and Optoelectronics Conference, 1995. Proceedings., 1995 SBMO/IEEE MTT-S International
Conference_Location :
Rio de Janeiro
Print_ISBN :
0-7803-2674-1
DOI :
10.1109/SBMOMO.1995.509645
