Thermal CAD for power III-V devices and MMICs

Author

Bonani, F. ; Ghione, G. ; Pirola, M. ; Naldi, C.U.

Author_Institution

Dipartimento di Elettronica, Politecnico di Torino, Italy

Volume

1

fYear

1995

fDate

24-27 Jul 1995

Firstpage

352

Abstract

A CAD approach (using a hybrid finite-element Green´s function strategy) is described for the thermal analysis of GaAs and III-V compound semiconductor devices and integrated circuits. The approach is based on a computationally efficient 3D large-scale thermal simulator allowing for non-linear multilayered and thinned substrates, via holes, and heat conduction through surface metallizations. Simulation examples concerning devices and circuits are discussed to demonstrate the simulator capabilities

Keywords

Green´s function methods; III-V semiconductors; MMIC; circuit analysis computing; finite element analysis; gallium arsenide; power amplifiers; power integrated circuits; thermal analysis; 3D large-scale thermal simulator; GaAs; III-V compound semiconductor devices; III-V integrated circuits; MESFET power amplifier; MMIC; heat conduction; hybrid finite element-Green´s function method; nonlinear multilayered substrates; power III-V devices; simulation; surface metallizations; thermal CAD; thermal analysis; thinned substrates; via holes; Circuit simulation; Computational modeling; Finite element methods; Gallium arsenide; Green´s function methods; Hybrid integrated circuits; III-V semiconductor materials; Large-scale systems; MMICs; Semiconductor devices;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave and Optoelectronics Conference, 1995. Proceedings., 1995 SBMO/IEEE MTT-S International

Conference_Location

Rio de Janeiro

Print_ISBN

0-7803-2674-1

Type

conf

DOI

10.1109/SBMOMO.1995.509645

Filename

509645