Low voltage X-band InGaP/GaAs power heterojunction bipolar transistor

Author

Fu, S.T. ; Yang, L.W. ; Ren, F. ; Abernathy, C.R. ; Pearton, S.J. ; Lothian, J.R.

Author_Institution

Martin Marietta Labs., Syracuse, NY, USA

fYear

1994

fDate

23-27 May 1994

Firstpage

675

Abstract

We report on the X-band power performance of InGaP/GaAs heterojunction bipolar transistor. At a low collector bias voltage of 5 V, a CW output power of 0.445 W is obtained from a InGaP/GaAs HBT consisting of twelve 2/spl times/15 /spl mu/m/sup 2/ emitter fingers, corresponding to a power density of 1.24 mWspl mu/m/sup 2/. The associated power gain is 7.5 dB and the linear gain and power-added efficiency are 9.2 dB and 42.6%, respectively. The device delivered 0.5 W CW output power, i.e. 1.39 mWspl mu/m/sup 2/, with 40% PAE and 6 dB power gain when the V/sub CE/ was increased to 6 V.<>

Keywords

III-V semiconductors; gallium arsenide; gallium compounds; heterojunction bipolar transistors; indium compounds; power transistors; solid-state microwave devices; 0.445 to 0.5 W; 40 to 42.6 percent; 5 to 6 V; 6 to 9.2 dB; CW output power; InGaP-GaAs; LV SHF device; X-band power performance; heterojunction bipolar transistor; low voltage device; power HBT; power-added efficiency; Fingers; Gain; Gallium arsenide; Heterojunction bipolar transistors; Low voltage; Power generation;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 1994., IEEE MTT-S International

Conference_Location

San Diego, CA, USA

ISSN

0149-645X

Print_ISBN

0-7803-1778-5

Type

conf

DOI

10.1109/MWSYM.1994.335514

Filename

335514