DocumentCode :
2197231
Title :
Experiment and analysis for single IGCT equipped in MV three-level inverter
Author :
Liqiang, Yuan ; Zhengming, Zhao ; Jianzheng, Liu ; Bing, Li
Author_Institution :
Dept. of Electr. Eng., Tsinghua Univ., Beijing, China
Volume :
2
fYear :
2005
fDate :
2-6 Oct. 2005
Firstpage :
825
Abstract :
In order to ensure the reliability and dynamic characters of IGCTs equipped in MV (medium voltage) three-level inverter, the switching experiments for single IGCT in the inverter are proposed in this paper. The experiment scheme is described in detail, including the topology, key parameters and the control method. Based on the experiment results, the switching behavior for every IGCT in the inverter is compared, and the influence factors to the behavior are analyzed, such as the inverter´s structure, topology position of IGCTs, the stray inductance in commutating loop, etc Finally, the advantages of the experiment are summarized in the conclusions.
Keywords :
invertors; switching convertors; thyristor convertors; IGCT; experiments; inverter switching; medium voltage three-level inverter; topology position; Automatic control; Circuit testing; Circuit topology; Diodes; Insulation testing; Medium voltage; Power system dynamics; Power system reliability; Power system simulation; Pulse width modulation inverters;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Industry Applications Conference, 2005. Fourtieth IAS Annual Meeting. Conference Record of the 2005
ISSN :
0197-2618
Print_ISBN :
0-7803-9208-6
Type :
conf
DOI :
10.1109/IAS.2005.1518430
Filename :
1518430
Link To Document :
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