Optimization of a MESFET RF power amplifier using a bias dependent large signal MESFET model

Author

Muñoz, S. ; Sebastián, J.L.

Author_Institution

Dept. de Fisica Aplicada III, Univ. Complutense de Madrid, Spain

Volume

1

fYear

1995

fDate

24-27 Jul 1995

Firstpage

373

Abstract

A large signal quasistatic MESFET model with bias dependent elements is derived from both experimental S parameters and DC measurements. As an application, this model is used in the design of a MESFET power amplifier. The analysis and gain optimization of the amplifier is performed using the describing function technique. Maximum gain is obtained by the determination of the optimum bias device conditions. The experimental results show excellent agreement with the CAD simulation

Keywords

S-parameters; circuit analysis computing; circuit optimisation; describing functions; microwave power amplifiers; nonlinear network analysis; power amplifiers; radiofrequency amplifiers; semiconductor device models; CAD simulation; DC measurements; MESFET RF power amplifier; describing function; experimental S parameter measurement; experimental results; gain optimization; microwave design; optimization; optimum device bias conditions; Circuit simulation; Electrical resistance measurement; Equivalent circuits; MESFETs; Power amplifiers; Predictive models; RF signals; Radio frequency; Radiofrequency amplifiers; Scattering parameters;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave and Optoelectronics Conference, 1995. Proceedings., 1995 SBMO/IEEE MTT-S International

Conference_Location

Rio de Janeiro

Print_ISBN

0-7803-2674-1

Type

conf

DOI

10.1109/SBMOMO.1995.509648

Filename

509648