Title :
Prediction of optimum large-signal microwave MESFET efficiency in multiplication and power amplification
Author :
Yagoub, M.C.E. ; Chouai, S. ; Baudrand, H. ; Neto, A. Duarte Doria
Author_Institution :
Lab. d´´Electron., ENSEEIHT, Toulouse, France
Abstract :
A method is described which enables the optimum large-signal efficiency to be obtained for a microwave active device independently of the required nonlinear function. The technique consists of determining the volume surrounded by a surface called the “characteristic surface” including all the allowed powers at the terminal ports of the nonlinear component in order to deduce its optimum “intrinsic” powers and then its corresponding optimum efficiency. Applied to MESFETs, the design of both a frequency multiplier and a power amplifier permits one to validate this method
Keywords :
Schottky gate field effect transistors; circuit optimisation; equivalent circuits; frequency multipliers; microwave power amplifiers; multiport networks; nonlinear network synthesis; characteristic surface; frequency multiplier; intrinsic powers; microwave MESFET efficiency; microwave active device; nonlinear component; nonlinear function; nonlinear microwave circuit design; optimum large-signal efficiency; power amplification; power amplifier; terminal ports; Circuit topology; Design optimization; Equations; Frequency; MESFETs; Microwave devices; Microwave theory and techniques; Power amplifiers; Power engineering and energy; Voltage;
Conference_Titel :
Microwave and Optoelectronics Conference, 1995. Proceedings., 1995 SBMO/IEEE MTT-S International
Conference_Location :
Rio de Janeiro
Print_ISBN :
0-7803-2674-1
DOI :
10.1109/SBMOMO.1995.509649
