1 W Ku-band AlGaAs/GaAs power HBTs with 72% peak power-added efficiency

Author

Shimura, T. ; Sakai, M. ; Inoue, A. ; Izumi, S. ; Matsuoka, H. ; Udomoto, J. ; Kosaki, K. ; Kuragaki, T. ; Hattori, R. ; Takano, H. ; Sonoda, T. ; Takamiya, S. ; Mitsui, S.

Author_Institution

Optoelectron. & Microwave Devices Lab., Mitsubishi Electr. Corp., Itami, Japan

fYear

1994

fDate

23-27 May 1994

Firstpage

687

Abstract

High power and high-efficiency multi-finger HBTs (heterojunction bipolar transistors) have been successfully realized at Ku-band by using emitter ballasting resistors and a PHS (plated heat sink) structure. An output power of 1 W with power added efficiency (PAE) of 72% at 12 GHz has been achieved from a ten-finger HBT with the total emitter size of 300 /spl mu/m/sup 2/. 72% PAE with the output power density of 5.0 W/mm is the best performance in the HBTs of which the output powers are more than 1 W at Ku-band.<>

Keywords

III-V semiconductors; aluminium compounds; gallium arsenide; heat sinks; heterojunction bipolar transistors; power transistors; solid-state microwave devices; 1 W; 12 GHz; 72 percent; AlGaAs-GaAs; Ku-band; SHF; emitter ballasting resistors; heterojunction bipolar transistors; high power operation; high-efficiency device; multifinger HBTs; plated heat sink; power HBTs; power-added efficiency; Electronic ballasts; Gallium arsenide; Heat sinks; Heterojunction bipolar transistors; Power generation; Resistors;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 1994., IEEE MTT-S International

Conference_Location

San Diego, CA, USA

ISSN

0149-645X

Print_ISBN

0-7803-1778-5

Type

conf

DOI

10.1109/MWSYM.1994.335517

Filename

335517