Modeling and simulation of electric potential profile of a square Ion Sensitive field effect transistor in the diffused layer

In this paper a model of the Square structure of Ion Sensitive field effect transistor (ISFET) is proposed. This work presents a model of the potential profile of a Square ISFET in the diffused layer along the radial direction. The potential profile for both flat side and corner of the Square ISFET has been investigated and a relationship between the two has also been developed. The model has been simulated in MATLAB and the result has been used to present a comparison of the electric potential variation perpendicular to the flat surface and in the direction of the corner of the device. The simulated result has also been compared with the existing literature.