DocumentCode
2197820
Title
Wilkinson splitter design for LTE applications based on Hi-Q silicon technology
Author
Huang, Lihuan ; Liu, Falin
Author_Institution
Dept. of Electron. Eng. & Inf. Sci., Univ. of Sci. & Technol. of China, Hefei, China
fYear
2011
fDate
9-11 Sept. 2011
Firstpage
2393
Lastpage
2396
Abstract
This paper presents a new design of a small integrated passive device (IPD)------Wilkinson splitter------for China TD-LTE band application. The splitter was designed and simulated in On-Semi Hi-Q technology and was realized in similar CMOS process. Measurement results agree quite well with simulation. This new type of splitter has a very small size and a much smaller thickness than its counterpart using LTCC design.
Keywords
CMOS integrated circuits; Long Term Evolution; CMOS process; IPD; LTCC design; On-Semi Hi-Q technology; TD-LTE band application; Wilkinson splitter design; integrated passive device; Copper; Inductors; Layout; Power transmission lines; Q factor; Silicon; Substrates; High-Q Inductor; IPD; Wilkinson Splitter;
fLanguage
English
Publisher
ieee
Conference_Titel
Electronics, Communications and Control (ICECC), 2011 International Conference on
Conference_Location
Zhejiang
Print_ISBN
978-1-4577-0320-1
Type
conf
DOI
10.1109/ICECC.2011.6067818
Filename
6067818
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