Title :
Wilkinson splitter design for LTE applications based on Hi-Q silicon technology
Author :
Huang, Lihuan ; Liu, Falin
Author_Institution :
Dept. of Electron. Eng. & Inf. Sci., Univ. of Sci. & Technol. of China, Hefei, China
Abstract :
This paper presents a new design of a small integrated passive device (IPD)------Wilkinson splitter------for China TD-LTE band application. The splitter was designed and simulated in On-Semi Hi-Q technology and was realized in similar CMOS process. Measurement results agree quite well with simulation. This new type of splitter has a very small size and a much smaller thickness than its counterpart using LTCC design.
Keywords :
CMOS integrated circuits; Long Term Evolution; CMOS process; IPD; LTCC design; On-Semi Hi-Q technology; TD-LTE band application; Wilkinson splitter design; integrated passive device; Copper; Inductors; Layout; Power transmission lines; Q factor; Silicon; Substrates; High-Q Inductor; IPD; Wilkinson Splitter;
Conference_Titel :
Electronics, Communications and Control (ICECC), 2011 International Conference on
Conference_Location :
Zhejiang
Print_ISBN :
978-1-4577-0320-1
DOI :
10.1109/ICECC.2011.6067818
