Title :
Low-noise performance of SiGe heterojunction bipolar transistors
Author :
Schumacher, H. ; Erben, U. ; Gruhle, A.
Author_Institution :
Dept. of Electron Devices, Ulm Univ., Germany
Abstract :
We have demonstrated, for the first time, a microwave noise figure below 1 dB at 10 GHz from a heterojunction bipolar transistor. The current and frequency dependence of the results obtained agree with the well-established Hawkins theory for bipolar transistor noise performance. An enhanced equivalent noise circuit including major parasitics provides valuable insight for the optimization of these devices for low-noise operation. Typical applications may include integrated RF front-ends where low-noise amplification is desired in addition to low phase-noise oscillation and mixing which typically benefit from bipolar devices.<>
Keywords :
Ge-Si alloys; III-V semiconductors; germanium alloys; heterojunction bipolar transistors; semiconductor device noise; silicon alloys; solid-state microwave devices; 10 GHz; Hawkins theory; RF front-ends; SiGe; SiGe heterojunction bipolar transistors; bipolar devices; bipolar transistor noise performance; current dependence; enhanced equivalent noise circuit; frequency dependence; low phase-noise oscillation; low-noise amplification; low-noise operation; low-noise performance; major parasitics; microwave noise figure; mixing; optimization; Bipolar transistors; Circuits; Frequency dependence; Germanium silicon alloys; Heterojunction bipolar transistors; Microwave devices; Noise figure; Radio frequency; Silicon germanium;
Conference_Titel :
Microwave Symposium Digest, 1994., IEEE MTT-S International
Conference_Location :
San Diego, CA, USA
Print_ISBN :
0-7803-1778-5
DOI :
10.1109/MWSYM.1994.335552
