Modeling the transient and steady state behaviour of a Glucose Oxidase based enzyme field effect transistor

In this paper a physicochemical model of a Glucose-sensitive enzyme field effect transistor (ENFET) immobilized with Glucose Oxidase (GOD) obtained from Aspergillus niger has been presented. Simulation of the enzymatic reactions inside the GOD enzyme layer based on Michaelis-Menten kinetics is done. A model based on time and position dependent diffusion of ions from the diffuse layer to the sensing surface through the enzyme layer has been developed. The site binding theory is incorporated to describe the reactions occurring at the enzyme-insulator interface. Modeling is done for enzyme-insulator interface potential and threshold voltage for the underlying pH-ISFET and simulation results are presented. Transients in the reaction is also presented here.