Bonding pad models for silicon VLSI technologies and their effects on the noise figure of RF NPNs

Author

Camilleri, N. ; Kirchgessner, J. ; Costa, J. ; Ngo, D. ; Lovelace, D.

Author_Institution

SPS-ACT, Motorola Inc., Mesa, AZ, USA

fYear

1994

fDate

23-27 May 1994

Firstpage

1179

Abstract

VLSI technologies such as BiCMOS and high speed ECL Bipolar are candidates for mixed mode applications which include RF receiver functions. In order for these silicon technologies to achieve low noise characteristics one needs to optimize both the active device and the signal path to the IC interface. Studies on the bonding pad parasitics indicate that these path losses can be very significant. This paper models the bonding pads and presents measured vs. modeled noise figure data for several bonding pad configurations.<>

Keywords

BiCMOS integrated circuits; VLSI; bipolar integrated circuits; elemental semiconductors; emitter-coupled logic; integrated circuit technology; semiconductor device noise; semiconductor process modelling; silicon; wafer bonding; BiCMOS; IC interface; RF NPNs; RF receiver functions; Si; active device; bonding pad models; high speed ECL Bipolar; mixed mode applications; noise figure; parasitics; path losses; signal path; silicon VLSI technologies; Active noise reduction; BiCMOS integrated circuits; Bonding; Integrated circuit noise; Noise figure; Radio frequency; Silicon; Very large scale integration;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 1994., IEEE MTT-S International

Conference_Location

San Diego, CA, USA

ISSN

0149-645X

Print_ISBN

0-7803-1778-5

Type

conf

DOI

10.1109/MWSYM.1994.335555

Filename

335555