Title :
GaN as a neutron detection material
Author :
Melton, Andrew ; Burgett, Eric ; Jamil, Muhammad ; Zaidi, Tahir ; Hertel, Nolan ; Ferguson, Ian
Author_Institution :
Georgia Inst. of Technol., Atlanta, GA, USA
Abstract :
GaN is a promising material for neutron detection applications, with advantages over Si and GaAs. GaN films doped with Gd have been grown by MOCVD and investigated for their feasibility for neutron detection. The films were structurally and electrically characterized through HRXRD and Hall effect measurements. Alpha particle luminescence of both doped and undoped films was used to investigate gamma discrimination properties.
Keywords :
Hall effect; III-V semiconductors; MOCVD coatings; X-ray diffraction; gallium compounds; ionoluminescence; neutron detection; semiconductor counters; semiconductor thin films; wide band gap semiconductors; GaN; HRXRD; Hall effect measurements; MOCVD; alpha particle luminescence; doped films; gamma discrimination properties; neutron detection material; undoped films; Alpha particles; Detectors; Electric variables measurement; Gallium arsenide; Gallium nitride; Hall effect; Luminescence; MOCVD; Neutrons; Performance evaluation;
Conference_Titel :
IEEE SoutheastCon 2010 (SoutheastCon), Proceedings of the
Conference_Location :
Concord, NC
Print_ISBN :
978-1-4244-5854-7
DOI :
10.1109/SECON.2010.5453842
