GaAs Fabry-Perot modulator for microwave applications

Author

Borges, B.V. ; Zubrzycki, W.J. ; Herczfeld, P.R. ; Kravitz, S.H. ; Hadley, G.R. ; Vawter, G.A. ; Corless, R.F. ; Smith, R.E. ; Wendt, J.R. ; Word, J.C. ; Bauer, T.M.

Author_Institution

Center for Microwave-Lightwave Eng., Drexel Univ., Philadelphia, PA, USA

Volume

2

fYear

1995

fDate

24-27 Jul 1995

Firstpage

653

Abstract

A distributed bragg reflector Fabry-Perot modulator for microwave applications is considered. The device consists of a Fabry-Perot cavity formed by etching gratings on a rib waveguide with a buried GaAs guiding layer. Computer simulations based on the finite difference method were used to model the device. State-of-the-art first order gratings with a pitch of 0.20 μm have been successfully fabricated

Keywords

III-V semiconductors; cavity resonators; diffraction gratings; electro-optical devices; finite difference methods; gallium arsenide; microwave devices; modulators; optical communication equipment; rib waveguides; 0.2 micron; Fabry-Perot cavity; III-V semiconductors; buried GaAs guiding layer; computer simulations; device model; distributed bragg reflector Fabry-Perot modulator; electrooptic modulators; finite difference method; first order gratings; microwave applications; pitch; rib waveguide; Electrooptic modulators; Fabry-Perot; Gallium arsenide; Gratings; Optical refraction; Optical scattering; Optical variables control; Optical waveguides; Resonance; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave and Optoelectronics Conference, 1995. Proceedings., 1995 SBMO/IEEE MTT-S International

Conference_Location

Rio de Janeiro

Print_ISBN

0-7803-2674-1

Type

conf

DOI

10.1109/SBMOMO.1995.509695

Filename

509695