DocumentCode
2198235
Title
A nine HEMT spatial amplifier
Author
Sheth, N. ; Ivanov, T. ; Balasubramaniyan, A. ; Mortazawi, A.
Author_Institution
Dept. of Electr. & Comput. Eng., Central Florida Univ., Orlando, FL, USA
fYear
1994
fDate
23-27 May 1994
Firstpage
1239
Abstract
A spatial power combining amplifier using HEMTs is designed and fabricated. The amplifier has a maximum gain of 5.5 dB at a frequency of 10.9 GHz with a 3 dB bandwidth of 1 GHz. The circuit is implemented on a double layer microstrip structure for effective input and output isolation.<>
Keywords
microwave amplifiers; solid-state microwave circuits; waveguide components; 1 GHz; 10.9 GHz; 5.5 dB; HEMT spatial amplifier; double layer microstrip structure; input isolation; output isolation; power combining amplifier; solid-state amplifiers; Bandwidth; Circuits; Frequency; Gain; HEMTs; Microstrip; Power amplifiers;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Symposium Digest, 1994., IEEE MTT-S International
Conference_Location
San Diego, CA, USA
ISSN
0149-645X
Print_ISBN
0-7803-1778-5
Type
conf
DOI
10.1109/MWSYM.1994.335571
Filename
335571
Link To Document