Title :
A nine HEMT spatial amplifier
Author :
Sheth, N. ; Ivanov, T. ; Balasubramaniyan, A. ; Mortazawi, A.
Author_Institution :
Dept. of Electr. & Comput. Eng., Central Florida Univ., Orlando, FL, USA
Abstract :
A spatial power combining amplifier using HEMTs is designed and fabricated. The amplifier has a maximum gain of 5.5 dB at a frequency of 10.9 GHz with a 3 dB bandwidth of 1 GHz. The circuit is implemented on a double layer microstrip structure for effective input and output isolation.<>
Keywords :
microwave amplifiers; solid-state microwave circuits; waveguide components; 1 GHz; 10.9 GHz; 5.5 dB; HEMT spatial amplifier; double layer microstrip structure; input isolation; output isolation; power combining amplifier; solid-state amplifiers; Bandwidth; Circuits; Frequency; Gain; HEMTs; Microstrip; Power amplifiers;
Conference_Titel :
Microwave Symposium Digest, 1994., IEEE MTT-S International
Conference_Location :
San Diego, CA, USA
Print_ISBN :
0-7803-1778-5
DOI :
10.1109/MWSYM.1994.335571
