Optical intensity modulator based on electrically induced periodic structure

Author

Silva, M. T Camargo ; Herczfeld, Peter R.

Author_Institution

Dept. of Electr. Eng., Sao Paulo Univ., Brazil

Volume

2

fYear

1995

fDate

24-27 Jul 1995

Firstpage

659

Abstract

An optical intensity modulator based on electrically induced periodic structure in a pn diode is reported. The interaction of the microwave electric field and the pn junction carriers results in a periodic structure which modulates the light intensity. Simulations have shown that a device 370 μm long, operating at -4.0 V, presents a bandwidth of 6.5 GHz at a modulation depth of 0.5 and an optical intrinsic loss of only 0.33 dB

Keywords

microwave diodes; optical communication equipment; optical modulation; -4 V; 0.32 dB; 370 micron; 6.5 GHz; GaAs; bandwidth; electrically induced periodic structure; light intensity modulation; microwave electric field; modulation depth; optical intensity modulator; optical intrinsic loss; pn diode; pn junction carriers; simulations; Gallium arsenide; High speed optical techniques; Intensity modulation; Optical buffering; Optical modulation; Optical refraction; Optical scattering; Optical sensors; Optical variables control; Periodic structures;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave and Optoelectronics Conference, 1995. Proceedings., 1995 SBMO/IEEE MTT-S International

Conference_Location

Rio de Janeiro

Print_ISBN

0-7803-2674-1

Type

conf

DOI

10.1109/SBMOMO.1995.509696

Filename

509696