Title :
New method for direct extraction of HBT equivalent circuit parameters
Author :
Wei, C.J. ; Hwang, J.C.M.
Author_Institution :
Lehigh Univ., Bethlehem, PA, USA
Abstract :
A new method for the direct extraction of HBT hybrid-T equivalent circuit from measured S-parameters is presented. The method differs from previous ones by extracting the equivalent circuit parameters without using test structures or numerical optimization techniques. The extracted parameters are essentially frequency-independent and they vary systematically with bias over the typical operating range of the HBT.<>
Keywords :
S-parameters; equivalent circuits; heterojunction bipolar transistors; semiconductor device models; solid-state microwave devices; HBT; S-parameters; direct extraction; equivalent circuit parameters; frequency-independent parameters; hybrid-T equivalent circuit; operating range; Circuit testing; Equivalent circuits; Frequency; Heterojunction bipolar transistors; Optimization methods; Scattering parameters;
Conference_Titel :
Microwave Symposium Digest, 1994., IEEE MTT-S International
Conference_Location :
San Diego, CA, USA
Print_ISBN :
0-7803-1778-5
DOI :
10.1109/MWSYM.1994.335573
