DocumentCode
2198273
Title
Small-signal modeling of high power HBTs using the scaling approach
Author
Hajji, Rached ; Ghannouchi, F.M. ; Kouki, A.B.
Author_Institution
Dept. of Electr. & Comput. Eng., Ecole Polytech. de Montreal, Que., Canada
fYear
1994
fDate
23-27 May 1994
Firstpage
1249
Abstract
A systematic scaling approach for the modeling of high-power/large-size HBTs is presented. The measured S-parameters of a three elementary-cell HBT are compared to those obtained with the scaled model and the commonly used lumped equivalent circuit model. It is shown that a better fit to the measured S parameters is obtained when the scaled model is used. The interconnections and parasitics between elementary cells are accounted for based on the actual footprint of the device.<>
Keywords
S-parameters; heterojunction bipolar transistors; power transistors; semiconductor device models; S-parameters; footprint; high power HBTs; interconnections; large-size HBTs; parasitics; scaling; small-signal modeling; three elementary-cell HBT; Equivalent circuits; Heterojunction bipolar transistors; Integrated circuit interconnections; Power system modeling; Scattering parameters;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Symposium Digest, 1994., IEEE MTT-S International
Conference_Location
San Diego, CA, USA
ISSN
0149-645X
Print_ISBN
0-7803-1778-5
Type
conf
DOI
10.1109/MWSYM.1994.335574
Filename
335574
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