Title :
Small-signal modeling of high power HBTs using the scaling approach
Author :
Hajji, Rached ; Ghannouchi, F.M. ; Kouki, A.B.
Author_Institution :
Dept. of Electr. & Comput. Eng., Ecole Polytech. de Montreal, Que., Canada
Abstract :
A systematic scaling approach for the modeling of high-power/large-size HBTs is presented. The measured S-parameters of a three elementary-cell HBT are compared to those obtained with the scaled model and the commonly used lumped equivalent circuit model. It is shown that a better fit to the measured S parameters is obtained when the scaled model is used. The interconnections and parasitics between elementary cells are accounted for based on the actual footprint of the device.<>
Keywords :
S-parameters; heterojunction bipolar transistors; power transistors; semiconductor device models; S-parameters; footprint; high power HBTs; interconnections; large-size HBTs; parasitics; scaling; small-signal modeling; three elementary-cell HBT; Equivalent circuits; Heterojunction bipolar transistors; Integrated circuit interconnections; Power system modeling; Scattering parameters;
Conference_Titel :
Microwave Symposium Digest, 1994., IEEE MTT-S International
Conference_Location :
San Diego, CA, USA
Print_ISBN :
0-7803-1778-5
DOI :
10.1109/MWSYM.1994.335574
