Title :
A physics-based temperature-dependent SPICE model for the simulation of high temperature microwave performance of HBT´s and experimental results
Author :
Krozer, V. ; Ruppert, M. ; Lee, W.Y. ; Grajal, J. ; Goldhorn, A. ; Schusler, Martin ; Fricke, K. ; Hartnagel, H.L.
Author_Institution :
Inst. fur Hochfrequenztech., Tech. Hochschule Darmstadt, Germany
Abstract :
A new temperature-dependent physical-based SPICE model has been developed. The simulated and experimental results for the microwave performance of HBT´s up to 240/spl deg/C ambient temperature are given. Fabrication of high temperature stable HBT´s is demonstrated. The origin of the deterioration of RF performance at increased ambient temperatures is investigated.<>
Keywords :
SPICE; heterojunction bipolar transistors; high-temperature phenomena and effects; semiconductor device models; solid-state microwave devices; 240 C; HBTs; RF performance; fabrication; high temperature microwave performance; high temperature stability; physics-based temperature-dependent SPICE model; simulation; Fabrication; Radio frequency; SPICE; Temperature;
Conference_Titel :
Microwave Symposium Digest, 1994., IEEE MTT-S International
Conference_Location :
San Diego, CA, USA
Print_ISBN :
0-7803-1778-5
DOI :
10.1109/MWSYM.1994.335577
