DocumentCode
2198354
Title
Feasibility of employing an I/sub DDQ/ output amplifier in deep submicron built-in current sensors
Author
Athan, S.P. ; Landis, D.L.
Author_Institution
Center for Microelectron. Res., Univ. of South Florida, Tampa, FL, USA
fYear
1996
fDate
24-25 Oct. 1996
Firstpage
68
Lastpage
72
Abstract
The feasibility of employing an I/sub DDQ/ output MOSFET amplifier in deep submicron CMOS ICs is evaluated. CUT performance is evaluated to determine the impact due to process scaling in the deep submicron regime. Comparisons of area overhead are made between BICS designs with and without the use of an output amplifier.
Keywords
CMOS integrated circuits; amplifiers; electric current measurement; electric sensing devices; integrated circuit testing; BICS design; IDDQ output amplifier; MOSFET amplifier; area overhead; built-in current sensor; deep submicron CMOS IC; Circuit faults; Circuit testing; Degradation; Diodes; MOSFET circuits; Monitoring; Propagation delay; Sensor phenomena and characterization; Silicon; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
IDDQ Testing, 1996., IEEE International Workshop on
Conference_Location
Washington, DC, USA
Print_ISBN
0-8186-7655-8
Type
conf
DOI
10.1109/IDDQ.1996.557822
Filename
557822
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