CdSe-ZnS quantum dot Langmuir films employing thiophene thiol as a capping ligand

Author

Giles, Alexander ; Stokes, Edward B.

Author_Institution

Nanoscale Sci. Ph.D. Program, Univ. of North Carolina at Charlotte, Charlotte, NC, USA

fYear

2010

fDate

18-21 March 2010

Firstpage

312

Lastpage

315

Abstract

Core-shell CdSe-ZnS quantum dots have been one of the most actively researched nanomaterials in the past decade. In this paper we introduce thiophene thiol (TPT) as a capping ligand on the CdSe-ZnS heterostructure. These conjugated ligands allow for improved carrier transport in comparison to their saturated, long chain hydrocarbon counterparts. By demonstrating a robust and inexpensive method to deposit close packed monolayers of these nanostructures, we hope to open the door for a new family of low cost inorganic devices employing them.

Keywords

II-VI semiconductors; Langmuir-Blodgett films; cadmium compounds; monolayers; nanostructured materials; organic compounds; semiconductor quantum dots; semiconductor thin films; zinc compounds; CdSe-ZnS; capping ligand; carrier transport; close packed monolayers; core-shell quantum dot; heterostructure; inorganic device; nanomaterials; quantum dot Langmuir Film; saturated hydrocarbon; thiophene thiol; Absorption; Biomedical optical imaging; Chemical technology; Nanocrystals; Optical films; Optical saturation; Optical sensors; Quantum dots; Robustness; Surface cleaning;

fLanguage

English

Publisher

ieee

Conference_Titel

IEEE SoutheastCon 2010 (SoutheastCon), Proceedings of the

Conference_Location

Concord, NC

Print_ISBN

978-1-4244-5854-7

Type

conf

DOI

10.1109/SECON.2010.5453862

Filename

5453862