DocumentCode :
2198427
Title :
CdSe-ZnS quantum dot Langmuir films employing thiophene thiol as a capping ligand
Author :
Giles, Alexander ; Stokes, Edward B.
Author_Institution :
Nanoscale Sci. Ph.D. Program, Univ. of North Carolina at Charlotte, Charlotte, NC, USA
fYear :
2010
fDate :
18-21 March 2010
Firstpage :
312
Lastpage :
315
Abstract :
Core-shell CdSe-ZnS quantum dots have been one of the most actively researched nanomaterials in the past decade. In this paper we introduce thiophene thiol (TPT) as a capping ligand on the CdSe-ZnS heterostructure. These conjugated ligands allow for improved carrier transport in comparison to their saturated, long chain hydrocarbon counterparts. By demonstrating a robust and inexpensive method to deposit close packed monolayers of these nanostructures, we hope to open the door for a new family of low cost inorganic devices employing them.
Keywords :
II-VI semiconductors; Langmuir-Blodgett films; cadmium compounds; monolayers; nanostructured materials; organic compounds; semiconductor quantum dots; semiconductor thin films; zinc compounds; CdSe-ZnS; capping ligand; carrier transport; close packed monolayers; core-shell quantum dot; heterostructure; inorganic device; nanomaterials; quantum dot Langmuir Film; saturated hydrocarbon; thiophene thiol; Absorption; Biomedical optical imaging; Chemical technology; Nanocrystals; Optical films; Optical saturation; Optical sensors; Quantum dots; Robustness; Surface cleaning;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
IEEE SoutheastCon 2010 (SoutheastCon), Proceedings of the
Conference_Location :
Concord, NC
Print_ISBN :
978-1-4244-5854-7
Type :
conf
DOI :
10.1109/SECON.2010.5453862
Filename :
5453862
Link To Document :
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