Title :
Effect of tunneling current on the modeling of AlGaAs/GaAs and InP/InGaAs/InP HBTs
Author :
Martins, Everson ; Swart, Jacobus W.
Author_Institution :
Univ. Estadual de Campinas, Sao Paulo, Brazil
Abstract :
HBTs of AlGaAs/GaAs and InP/InGaAs are characterized and modeled. The effect of the tunneling current through the spike at the emitter-base heterojunction is analysed and shown that it is possible to include it in the Ebers-Moll model. A comparison of the measured current of the HBTs with the current calculated by the modified Ebers-Moll model, which includes the thermionic emission, is presented
Keywords :
III-VI semiconductors; aluminium compounds; electric current measurement; gallium arsenide; heterojunction bipolar transistors; indium compounds; semiconductor device models; semiconductor device testing; thermionic electron emission; AlGaAs-GaAs; Ebers-Moll model; HBT; InP-InGaAs; InP-InGaAs-InP; current measurement; emitter-base heterojunction; modeling; thermionic emission; tunneling current; Electron emission; Gallium arsenide; Heterojunction bipolar transistors; Indium gallium arsenide; Indium phosphide; Integrated circuit modeling; Niobium; SPICE; Thermionic emission; Tunneling;
Conference_Titel :
Microwave and Optoelectronics Conference, 1995. Proceedings., 1995 SBMO/IEEE MTT-S International
Conference_Location :
Rio de Janeiro
Print_ISBN :
0-7803-2674-1
DOI :
10.1109/SBMOMO.1995.509711
