Effect of tunneling current on the modeling of AlGaAs/GaAs and InP/InGaAs/InP HBTs

Author

Martins, Everson ; Swart, Jacobus W.

Author_Institution

Univ. Estadual de Campinas, Sao Paulo, Brazil

Volume

2

fYear

1995

fDate

24-27 Jul 1995

Firstpage

761

Abstract

HBTs of AlGaAs/GaAs and InP/InGaAs are characterized and modeled. The effect of the tunneling current through the spike at the emitter-base heterojunction is analysed and shown that it is possible to include it in the Ebers-Moll model. A comparison of the measured current of the HBTs with the current calculated by the modified Ebers-Moll model, which includes the thermionic emission, is presented

Keywords

III-VI semiconductors; aluminium compounds; electric current measurement; gallium arsenide; heterojunction bipolar transistors; indium compounds; semiconductor device models; semiconductor device testing; thermionic electron emission; AlGaAs-GaAs; Ebers-Moll model; HBT; InP-InGaAs; InP-InGaAs-InP; current measurement; emitter-base heterojunction; modeling; thermionic emission; tunneling current; Electron emission; Gallium arsenide; Heterojunction bipolar transistors; Indium gallium arsenide; Indium phosphide; Integrated circuit modeling; Niobium; SPICE; Thermionic emission; Tunneling;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave and Optoelectronics Conference, 1995. Proceedings., 1995 SBMO/IEEE MTT-S International

Conference_Location

Rio de Janeiro

Print_ISBN

0-7803-2674-1

Type

conf

DOI

10.1109/SBMOMO.1995.509711

Filename

509711