An improved model for the GaAs HBT frequency performance under optical illumination

Author

De Salles, A.A. ; Larangeira, G.G.

Author_Institution

Dept. of Electr. Eng., Federal Univ. of Rio Grande do Sul, Porto Alegre, Brazil

Volume

2

fYear

1995

fDate

24-27 Jul 1995

Firstpage

767

Abstract

The theory and model for the GaAs heterojunction bipolar transistor (HBT) frequency performance under optical illumination are described. Photons absorbed in the base-collector depletion region, as well as those absorbed in the neutral base and collector regions are taken into account. The relative importance of these effects and their frequency performance are studied and estimations of the high-frequency photoresponse using PSPICE circuit simulations are shown

Keywords

III-V semiconductors; circuit analysis computing; equivalent circuits; frequency response; gallium arsenide; heterojunction bipolar transistors; microwave bipolar transistors; photoconductivity; semiconductor device models; GaAs; HBT; III-V semiconductors; PSPICE circuit simulations; base-collector depletion region; equivalent circuit; frequency performance; heterojunction bipolar transistor model; high-frequency photoresponse; microwave semiconductor devices; neutral base region; neutral collector region; optical illumination; photocurrent; photons; Circuit simulation; Frequency estimation; Gallium arsenide; Heterojunction bipolar transistors; Lighting; Microwave devices; Optical mixing; Optical modulation; Photoconductivity; Stimulated emission;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave and Optoelectronics Conference, 1995. Proceedings., 1995 SBMO/IEEE MTT-S International

Conference_Location

Rio de Janeiro

Print_ISBN

0-7803-2674-1

Type

conf

DOI

10.1109/SBMOMO.1995.509712

Filename

509712