Title :
An improved model for the GaAs HBT frequency performance under optical illumination
Author :
De Salles, A.A. ; Larangeira, G.G.
Author_Institution :
Dept. of Electr. Eng., Federal Univ. of Rio Grande do Sul, Porto Alegre, Brazil
Abstract :
The theory and model for the GaAs heterojunction bipolar transistor (HBT) frequency performance under optical illumination are described. Photons absorbed in the base-collector depletion region, as well as those absorbed in the neutral base and collector regions are taken into account. The relative importance of these effects and their frequency performance are studied and estimations of the high-frequency photoresponse using PSPICE circuit simulations are shown
Keywords :
III-V semiconductors; circuit analysis computing; equivalent circuits; frequency response; gallium arsenide; heterojunction bipolar transistors; microwave bipolar transistors; photoconductivity; semiconductor device models; GaAs; HBT; III-V semiconductors; PSPICE circuit simulations; base-collector depletion region; equivalent circuit; frequency performance; heterojunction bipolar transistor model; high-frequency photoresponse; microwave semiconductor devices; neutral base region; neutral collector region; optical illumination; photocurrent; photons; Circuit simulation; Frequency estimation; Gallium arsenide; Heterojunction bipolar transistors; Lighting; Microwave devices; Optical mixing; Optical modulation; Photoconductivity; Stimulated emission;
Conference_Titel :
Microwave and Optoelectronics Conference, 1995. Proceedings., 1995 SBMO/IEEE MTT-S International
Conference_Location :
Rio de Janeiro
Print_ISBN :
0-7803-2674-1
DOI :
10.1109/SBMOMO.1995.509712
