DocumentCode :
2198630
Title :
Modeling of RF coupling on SSC silicon microstrip detector
Author :
Chao, F.-L.
Author_Institution :
Ind. Technol. Res. Inst., Hsinchu
fYear :
1993
fDate :
9-13 Aug 1993
Firstpage :
431
Lastpage :
433
Abstract :
The silicon microstrip detectors are important parts of the Superconducting Supercollider program. SPICE simulation indicates that the pulse shape on the detector is distorted by the resistance of the thin strip. The RF coupling from the external field was calculated by the method of moments. Simulation results showed that the induced voltage increased proportionally to the frequency. The induced voltage on a high-resistance line became lower at a higher frequency than that of a low-resistance line
Keywords :
electromagnetic induction; elemental semiconductors; method of moments; silicon; superconducting microwave devices; superconducting particle detectors; RF coupling; SPICE simulation; Si; Superconducting Supercollider program; external field; frequency; high-resistance line; induced voltage; low-resistance line; method of moments; pulse shape; quasi-static behavior; resistance; silicon microstrip detector; simulation results; Detectors; Microstrip components; Moment methods; Pulse shaping methods; Radio frequency; SPICE; Shape; Silicon; Strips; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electromagnetic Compatibility, 1993. Symposium Record., 1993 IEEE International Symposium on
Conference_Location :
Dallas, TX
Print_ISBN :
0-7803-1304-6
Type :
conf
DOI :
10.1109/ISEMC.1993.473695
Filename :
473695
Link To Document :
بازگشت