Title :
Carrier recombination in single and double heterojunction bipolar transistors
Author :
Spiegel, Solon Jose
Author_Institution :
Dept. of Electr. Eng., Technion-Israel Inst. of Technol., Haifa, Israel
Abstract :
Carrier recombination in single and double abrupt bipolar transistors (HBTs) is analysed. The numerical results performed on InP based structures show that the recombination rate in the neutral base of double abrupt HBTs is higher than in single abrupt HBTs owing to the electron confinement in the base region
Keywords :
III-V semiconductors; carrier density; heterojunction bipolar transistors; hole density; indium compounds; thermionic electron emission; HBT; III-V semiconductors; InP; base region; carrier recombination; double heterojunction bipolar transistors; electron concentration; electron confinement; hole concentration; numerical results; recombination rate; single heterojunction bipolar transistors; Carrier confinement; Charge carrier processes; Double heterojunction bipolar transistors; Electron mobility; Heterojunction bipolar transistors; Indium gallium arsenide; Indium phosphide; Poisson equations; Spontaneous emission; Thermionic emission;
Conference_Titel :
Microwave and Optoelectronics Conference, 1995. Proceedings., 1995 SBMO/IEEE MTT-S International
Conference_Location :
Rio de Janeiro
Print_ISBN :
0-7803-2674-1
DOI :
10.1109/SBMOMO.1995.509713
