Design and DC parameter extraction of the high linearity Al0.27Ga0.73N/AlN/Al0.04Ga0.96N/GaN HEMT

Author

Cheng, Zhiqun ; Wang, Qingna ; Feng, Zhihong ; Song, Jianbo ; Yin, Jiayun

Author_Institution

Key Lab. of RF Circuit & Syst., Hangzhou Dianzi Univ., Hangzhou, China

fYear

2011

fDate

9-11 Sept. 2011

Firstpage

1979

Lastpage

1981

Abstract

DC parameter extraction of a novel high linearity Al_0.27Ga_0.73N/AlN/ Al_0.04Ga_0.96N/GaN HEMT with composited-layer and unintentionally doping barrier is presented. The devices with gate length of 0.3μm and T-shaped gate width of 1000μm are designed and fabricated. EEHEMT1 model is adapted to DC parameter extraction by using software of ICCAP. Comparison between measured results and simulated results shows extracting parameters of EEHEMT1 model are in good agreement with measured results.

Keywords

III-V semiconductors; aluminium compounds; gallium compounds; high electron mobility transistors; semiconductor device models; semiconductor doping; wide band gap semiconductors; Al_0.27Ga_0.73N-AlN-Al_0.04Ga_0.96N-GaN; DC parameter extraction; EEHEMT1 model; ICCAP software; T-shaped gate width; composited-layer; high linearity HEMT; size 0.3 mum; size 1000 mum; unintentionally doping barrier; Computational modeling; Gallium nitride; HEMTs; Linearity; Load modeling; Logic gates; Parameter extraction; DC parameter extraction; GaN HEMT; high linearity;

fLanguage

English

Publisher

ieee

Conference_Titel

Electronics, Communications and Control (ICECC), 2011 International Conference on

Conference_Location

Zhejiang

Print_ISBN

978-1-4577-0320-1

Type

conf

DOI

10.1109/ICECC.2011.6067853

Filename

6067853