Title :
Heterojunction bipolar transistors under illumination: theory and experiment
Author :
De Barros, L.E.M. ; Paolella, A. ; Herczfeld, P.
Author_Institution :
Center for Microwave/Lightwave Technol., Drexel Univ., Philadelphia, PA, USA
Abstract :
A new model for the HBT has been developed which solves for the electrical and photogenerated currents in the base, emitter, and collector. The model accounts for the discontinuity in the quasi-fermi level by defining an effective carrier interface velocity. Experimental and theoretical curves relating to the device behavior are presented and compared
Keywords :
Fermi level; carrier mobility; heterojunction bipolar transistors; photodetectors; semiconductor device models; HBT; base; collector; device behavior; discontinuity; effective carrier interface velocity; emitter; heterojunction bipolar transistors; illumination; photogenerated currents; quasi-fermi level; Current density; Energy consumption; Frequency response; Heterojunction bipolar transistors; Lighting; Microwave devices; Microwave theory and techniques; Optical receivers; Photoconductivity; Poisson equations;
Conference_Titel :
Microwave and Optoelectronics Conference, 1995. Proceedings., 1995 SBMO/IEEE MTT-S International
Conference_Location :
Rio de Janeiro
Print_ISBN :
0-7803-2674-1
DOI :
10.1109/SBMOMO.1995.509738
