Title :
Displacement effects induced by high energy protons in semiconductor electronic devices
Author :
Buisson, J. ; Gaillard, R. ; Jaureguy, J.-C. ; Poirault, G.
Author_Institution :
CEA, Centre d´´Etudes Nucleaires de Saclay, Gif-sur-Yvette, France
Abstract :
Degradation coefficients of semiconductor devices irradiated by high energy protons (10 MeV to 800 MeV) at Saturne and Van de Graaf facilities are measured and compared to the NIEL curve of protons in silicon. PIN dosimetry detector´s direct voltage variation is modeled by using a device simulator code and the origin of the direct voltage variation with the fluence is clearly identified
Keywords :
proton effects; semiconductor device models; semiconductor device reliability; 10 to 800 MeV; NIEL curve; PIN dosimetry detector; Saturne; Si; Van de Graaf facilities; degradation coefficients; device simulator code; direct voltage variation; displacement effects; fluence; high energy protons; semiconductor electronic devices; Degradation; Diodes; Dissolved gas analysis; Neutrons; OFDM modulation; Protons; Resumes; Satellites; Synchrocyclotrons; Testing;
Conference_Titel :
Radiation and its Effects on Components and Systems, 1995. RADECS 95., Third European Conference on
Conference_Location :
Arcachon
Print_ISBN :
0-7803-3093-5
DOI :
10.1109/RADECS.1995.509745
