Title :
Radiation induced shift study in parasitic MOS structures by 2D numerical simulation
Author :
Escoffier, R. ; Michez, A. ; Cirba, C. ; Bordure, G. ; Ferlet-Cavrois, V. ; Paillet, P. ; Leray, J.L.
Author_Institution :
Centre d´´Electron., Univ. des Sci. et Tech. du Languedoc, Montpellier, France
Abstract :
Charge trapping effects have been investigated by numerical simulation in parasitic lateral MOS transistor oxides under different radiation doses up to 60 krad. We bring out the position and the density of trapping charges influence on the parasitic conduction channels creation
Keywords :
MOSFET; X-ray effects; 2D numerical simulation; 60 krad; charge trapping; conduction channel; parasitic lateral MOS transistor oxide; radiation induced shift; Charge carrier density; Charge carrier processes; Electrodes; Electron traps; Integrated circuit technology; MOSFETs; Numerical simulation; Poisson equations; Size control; Voltage;
Conference_Titel :
Radiation and its Effects on Components and Systems, 1995. RADECS 95., Third European Conference on
Conference_Location :
Arcachon
Print_ISBN :
0-7803-3093-5
DOI :
10.1109/RADECS.1995.509749
