DocumentCode
2199440
Title
Radiation induced shift study in parasitic MOS structures by 2D numerical simulation
Author
Escoffier, R. ; Michez, A. ; Cirba, C. ; Bordure, G. ; Ferlet-Cavrois, V. ; Paillet, P. ; Leray, J.L.
Author_Institution
Centre d´´Electron., Univ. des Sci. et Tech. du Languedoc, Montpellier, France
fYear
1995
fDate
18-22 Sep 1995
Firstpage
45
Lastpage
49
Abstract
Charge trapping effects have been investigated by numerical simulation in parasitic lateral MOS transistor oxides under different radiation doses up to 60 krad. We bring out the position and the density of trapping charges influence on the parasitic conduction channels creation
Keywords
MOSFET; X-ray effects; 2D numerical simulation; 60 krad; charge trapping; conduction channel; parasitic lateral MOS transistor oxide; radiation induced shift; Charge carrier density; Charge carrier processes; Electrodes; Electron traps; Integrated circuit technology; MOSFETs; Numerical simulation; Poisson equations; Size control; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Radiation and its Effects on Components and Systems, 1995. RADECS 95., Third European Conference on
Conference_Location
Arcachon
Print_ISBN
0-7803-3093-5
Type
conf
DOI
10.1109/RADECS.1995.509749
Filename
509749
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