Title :
Impact ionization influence on the photocurrent of an irradiated junction
Author :
Sudre, C. ; Pelanchon, F. ; Moreau, Y. ; Palau, J.-M. ; Gasiot, J.
Author_Institution :
Centre d´´Electron., Univ. des Sci. et Tech. du Languedoc, Montpellier, France
Abstract :
2D simulations of an irradiated p-n junction shows the influence of the impact ionization phenomena. This influence increases with the dose rate and with the applied reverse bias. Photocurrent simulations must thus take into account the impact ionization
Keywords :
X-ray effects; impact ionisation; p-n junctions; photoconductivity; 2D simulation; X-ray irradiation; impact ionization; p-n junction; photocurrent; Content addressable storage; Electrons; Instruction sets; Ionization; Medical simulation; Polarization; Radiative recombination; Semiconductor diodes; Spontaneous emission; Sun;
Conference_Titel :
Radiation and its Effects on Components and Systems, 1995. RADECS 95., Third European Conference on
Conference_Location :
Arcachon
Print_ISBN :
0-7803-3093-5
DOI :
10.1109/RADECS.1995.509751
