DocumentCode
2199488
Title
Impact ionization influence on the photocurrent of an irradiated junction
Author
Sudre, C. ; Pelanchon, F. ; Moreau, Y. ; Palau, J.-M. ; Gasiot, J.
Author_Institution
Centre d´´Electron., Univ. des Sci. et Tech. du Languedoc, Montpellier, France
fYear
1995
fDate
18-22 Sep 1995
Firstpage
57
Lastpage
60
Abstract
2D simulations of an irradiated p-n junction shows the influence of the impact ionization phenomena. This influence increases with the dose rate and with the applied reverse bias. Photocurrent simulations must thus take into account the impact ionization
Keywords
X-ray effects; impact ionisation; p-n junctions; photoconductivity; 2D simulation; X-ray irradiation; impact ionization; p-n junction; photocurrent; Content addressable storage; Electrons; Instruction sets; Ionization; Medical simulation; Polarization; Radiative recombination; Semiconductor diodes; Spontaneous emission; Sun;
fLanguage
English
Publisher
ieee
Conference_Titel
Radiation and its Effects on Components and Systems, 1995. RADECS 95., Third European Conference on
Conference_Location
Arcachon
Print_ISBN
0-7803-3093-5
Type
conf
DOI
10.1109/RADECS.1995.509751
Filename
509751
Link To Document