DocumentCode
2199523
Title
Reversible positive charge annealing in MOS transistor during variety of electrical and thermal stresses
Author
Emelianov, V.V. ; Zebrev, G.I. ; Ulimov, V.N. ; Useinov, R.G. ; Belyakov, V.V. ; Pershenkov, V.S.
Author_Institution
Res. Inst. of Sci. Instrum., Moscow, Russia
fYear
1995
fDate
18-22 Sep 1995
Firstpage
61
Lastpage
65
Abstract
The postirradiation response of n-channel MOSTs during thermal and electrical stresses is investigated. It is found that reversible positive charge annealing plays a key role in the postirradiation response of MOSTs. A mathematical model of reversible charge relaxation processes is suggested
Keywords
MOSFET; annealing; charge relaxation; electrical stress; n-channel MOS transistor; postirradiation response; reversible positive charge annealing; thermal stress; Annealing; Electron traps; Instruments; MOSFETs; Mathematical model; Temperature; Thermal stresses; Thermoelectric devices; Thermoelectricity; Threshold voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Radiation and its Effects on Components and Systems, 1995. RADECS 95., Third European Conference on
Conference_Location
Arcachon
Print_ISBN
0-7803-3093-5
Type
conf
DOI
10.1109/RADECS.1995.509752
Filename
509752
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