Title :
Substrate effects on the degradation of irradiated Si diodes
Author :
Ohyama, H. ; Vanhellemont, J. ; Simoen, E. ; Claeys, C. ; Takami, Y. ; Hayama, K. ; Yoshimoto, K. ; Sunaga, H. ; Kobayashi, K.
Author_Institution :
Kumamoto Nat. Coll. of Technol., Japan
Abstract :
Irradiation damage in n+p and p+n Si diodes by 1-MeV fast neutrons and 1 to 2-MeV electrons is studied as a function of type of Si substrate and radiation source. The degradation of the electrical performance of diodes by irradiation increases with increasing fluence and is much larger for CZ-Si diodes than for FZ-Si diodes. The difference of radiation damage is thought to be due to the formation of lattice defects which are associated with the creation of oxygen related complexes. The degraded performance recovers by thermal annealing. The activation energy of reverse current recovery of n+ p Si diodes irradiated by neutrons with a fluence of 1×10 13 n/cm2 is calculated to be 0.35 and 0.19 eV
Keywords :
Fourier transform spectroscopy; annealing; electron beam effects; elemental semiconductors; infrared spectroscopy; neutron effects; semiconductor device reliability; semiconductor diodes; silicon; 0.19 eV; 0.35 eV; 1 to 2 MeV; Si; activation energy; electrical performance degradation; electron beam effects; fast neutrons; fluence; irradiation damage; lattice defects; n+p diodes; oxygen related complexes; p+n diodes; radiation source; reverse current recovery; substrate effects; thermal annealing; Annealing; Atomic measurements; Chemistry; Educational institutions; Electrons; Infrared spectra; Neutrons; Semiconductor diodes; Substrates; Thermal degradation;
Conference_Titel :
Radiation and its Effects on Components and Systems, 1995. RADECS 95., Third European Conference on
Conference_Location :
Arcachon
Print_ISBN :
0-7803-3093-5
DOI :
10.1109/RADECS.1995.509754
