Title :
Gamma-ray irradiation induced degradation in ultra-thin silica layers
Author :
Aassime, A. ; Sarrabayrouse, G.J. ; Salace, G. ; Petit, E. T C
Author_Institution :
Fac. des Sci., Lab. d´´Anal. des Solides Surfaces et Interfaces, Reims, France
Abstract :
In this paper, the influence of gamma irradiation (unbiased devices) on the electrical properties of Metal-Oxide-Semiconductor (MOS) devices with an ultra-thin silica layer N2O-nitrided or not is investigated. Mainly electron trapping, defects generation and breakdown during electrical stress are studied
Keywords :
MIS devices; electric breakdown; electron traps; gamma-ray effects; insulating thin films; semiconductor device reliability; silicon compounds; MOS devices; SiO2; breakdown; defects generation; electrical stress; electron trapping; gamma-ray irradiation induced degradation; ultra-thin insulating layer; Aluminum; Circuits; Content addressable storage; Degradation; EPROM; Fabrication; Ionizing radiation; Polarization; Transconductance; Very large scale integration;
Conference_Titel :
Radiation and its Effects on Components and Systems, 1995. RADECS 95., Third European Conference on
Conference_Location :
Arcachon
Print_ISBN :
0-7803-3093-5
DOI :
10.1109/RADECS.1995.509755
