Shallow and deep donors induced by light ions in N-type silicon

Author

Ntsoenzok, E. ; Desgardin, P. ; Barbot, J.F. ; Vernois, J. ; Isabelle, D.B.

Author_Institution

CERI, CNRS, Orleans, France

fYear

1995

fDate

18-22 Sep 1995

Firstpage

85

Lastpage

88

Abstract

We have studied the evolution of the doping profile in power device components after irradiation by protons and alpha particles. Both annealed and unannealed samples were measured by C-V measurements carried out as functions of the sample temperature and of the Fermi level position. For samples irradiated by protons, the deep donors were present before annealing while the shallow donors appear after annealing. For the samples irradiated with alpha particles the deep donors were present in unannealed samples while no donor (whether shallow or deep) was measured after annealing at 400°C

Keywords

alpha-particle effects; annealing; characteristics measurement; doping profiles; elemental semiconductors; impurity states; power semiconductor devices; proton effects; silicon; 400 degC; C-V measurements; Fermi level position; Si; alpha particle irradiation; annealing; deep donors; doping profile; light ions; power device components; proton irradiation; sample temperature; shallow donors; Alpha particles; Annealing; Capacitance-voltage characteristics; Doping profiles; Position measurement; Protons; Schottky diodes; Shape measurement; Silicon; Temperature dependence;

fLanguage

English

Publisher

ieee

Conference_Titel

Radiation and its Effects on Components and Systems, 1995. RADECS 95., Third European Conference on

Conference_Location

Arcachon

Print_ISBN

0-7803-3093-5

Type

conf

DOI

10.1109/RADECS.1995.509756

Filename

509756