DocumentCode
2199670
Title
Development of facilities for investigating single-event effects
Author
Nashiyama, Isamu ; Hirao, Toshio ; Itoh, Hisayoshi ; Kamiya, Tomihiro ; NAITO, Ichiro ; Matsuda, Sumio
Author_Institution
JAERI, Gunma, Japan
fYear
1995
fDate
18-22 Sep 1995
Firstpage
94
Lastpage
100
Abstract
Energetic heavy-ion irradiation apparatus has been developed for single-event effects (SEE) testing. We have applied three irradiation methods, scattered-ion irradiation method, a recoiled-atom irradiation method, and a direct-beam irradiation method to perform SEE testing efficiently. For the study of basic mechanisms of single-event upset, we have developed a transient current measurement system by combining focused high-energy ion microbeams with a wide bandwidth digitizing sampling technique. The waveform of transient current induced by an energetic heavy-ion strike on a silicon test diode was measured with 1 μm positioning accuracy. We succeeded in experimental separation of the delayed diffusion current from the prompt drift and funneling currents
Keywords
aerospace test facilities; elemental semiconductors; focused ion beam technology; ion beam effects; ion beams; radiation hardening (electronics); semiconductor device testing; semiconductor diodes; silicon; space vehicle electronics; SEE testing; Si; delayed diffusion current; digitizing sampling technique; direct-beam irradiation method; drift current; energetic heavy-ion strike; focused high-energy ion microbeams; funneling current; heavy-ion irradiation apparatus; positioning accuracy; recoiled-atom irradiation method; scattered-ion irradiation method; single-event effects; space radiation environment; test diode; transient current measurement system; Bandwidth; Current measurement; Diodes; Energy measurement; Performance evaluation; Position measurement; Sampling methods; Scattering; Silicon; Testing;
fLanguage
English
Publisher
ieee
Conference_Titel
Radiation and its Effects on Components and Systems, 1995. RADECS 95., Third European Conference on
Conference_Location
Arcachon
Print_ISBN
0-7803-3093-5
Type
conf
DOI
10.1109/RADECS.1995.509758
Filename
509758
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