Title :
A systematic investigation of the influence of processing parameters on the radiation hardness of reoxidized nitrided oxides
Author :
Neumeier, K. ; Bruemmer, H.P.
Author_Institution :
Fraunhofer-Inst. fur Festkorpertechnologie, Munich, Germany
Abstract :
To optimize radiation hardness of reoxidized nitrided oxides (RNO) gate dielectrics the influence of processing parameters was systematically investigated. The dependence on oxidation temperature, nitridation temperature and time, and reoxidation temperature and time was determined by means of orthogonal matrices. The best samples exhibited a 30 times lower flatband voltage shift than the worst. Compared to hardened gate oxides optimized RNO dielectrics showed an improvement in radiation hardness by a factor of 7. At 1.5 Mrad(Si) the flatband voltage shift of 25 nm gate dielectrics was reduced to 150 mV
Keywords :
gamma-ray effects; nitridation; oxidation; radiation hardening (electronics); semiconductor technology; 1.5 Mrad; RNO gate dielectric; flatband voltage shift; nitridation; orthogonal matrices; oxidation; processing parameters; radiation hardness; reoxidation; reoxidized nitrided oxide; Capacitors; Dielectric breakdown; Electrons; Impurities; Interface states; Oxidation; Radiation hardening; Temperature dependence; Temperature distribution; Voltage;
Conference_Titel :
Radiation and its Effects on Components and Systems, 1995. RADECS 95., Third European Conference on
Conference_Location :
Arcachon
Print_ISBN :
0-7803-3093-5
DOI :
10.1109/RADECS.1995.509765
