A systematic investigation of the influence of processing parameters on the radiation hardness of reoxidized nitrided oxides

Author

Neumeier, K. ; Bruemmer, H.P.

Author_Institution

Fraunhofer-Inst. fur Festkorpertechnologie, Munich, Germany

fYear

1995

fDate

18-22 Sep 1995

Firstpage

131

Lastpage

136

Abstract

To optimize radiation hardness of reoxidized nitrided oxides (RNO) gate dielectrics the influence of processing parameters was systematically investigated. The dependence on oxidation temperature, nitridation temperature and time, and reoxidation temperature and time was determined by means of orthogonal matrices. The best samples exhibited a 30 times lower flatband voltage shift than the worst. Compared to hardened gate oxides optimized RNO dielectrics showed an improvement in radiation hardness by a factor of 7. At 1.5 Mrad(Si) the flatband voltage shift of 25 nm gate dielectrics was reduced to 150 mV

Keywords

gamma-ray effects; nitridation; oxidation; radiation hardening (electronics); semiconductor technology; 1.5 Mrad; RNO gate dielectric; flatband voltage shift; nitridation; orthogonal matrices; oxidation; processing parameters; radiation hardness; reoxidation; reoxidized nitrided oxide; Capacitors; Dielectric breakdown; Electrons; Impurities; Interface states; Oxidation; Radiation hardening; Temperature dependence; Temperature distribution; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Radiation and its Effects on Components and Systems, 1995. RADECS 95., Third European Conference on

Conference_Location

Arcachon

Print_ISBN

0-7803-3093-5

Type

conf

DOI

10.1109/RADECS.1995.509765

Filename

509765