Analog performance of SOI MOSFETs up to 25 mrad (Si)

Author

Faccio, F. ; Aspell, P. ; Heijne, E.H.M. ; Jarron, P. ; Borel, G.

Author_Institution

CERN, Geneva, Switzerland

fYear

1995

fDate

18-22 Sep 1995

Firstpage

137

Lastpage

141

Abstract

We have studied the analog performance of the HSOI3-HD technology (industrialized by Thomson TCS, St. Egreve, France) up to a total dose of 25 Mrad of ionising radiation. Static parameters and their evolution have been extracted, and particular attention has been devoted to the noise. We found that most of the damage occurs in the first 12 Mrad, so the technology can find applications where tens of Mrad total doses are foreseen. P-channel transistors should be chosen as key elements in low noise ICs, with a maximum degradation of 18% in transconductance and better 1/f noise performance. A Generation-Recombination component in the noise spectra can be controlled through the body bias. We have studied the energy level of the trapping centers responsible for it and found that it is not modified by the irradiation

Keywords

1/f noise; MOSFET; gamma-ray effects; semiconductor device noise; silicon-on-insulator; 1/f noise; 25 Mrad; HSOI3-HD technology; P-channel transistor; SOI MOSFET; analog performance; damage; energy levels; generation-recombination noise; ionising radiation; static parameters; transconductance; trapping centers; CMOS technology; Energy states; Large Hadron Collider; MOSFETs; Noise generators; Noise measurement; Semiconductor device noise; Substrates; Temperature; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Radiation and its Effects on Components and Systems, 1995. RADECS 95., Third European Conference on

Conference_Location

Arcachon

Print_ISBN

0-7803-3093-5

Type

conf

DOI

10.1109/RADECS.1995.509766

Filename

509766