Title :
Modelling CMOS radiation tolerance in the high-dose range
Author :
Holmes-Siedle, Andrew ; Christensen, Palle ; Adams, Leonard ; Seifert, Claudia-Christina
Author_Institution :
Centre for Radiat. Damage Studies, Brunel Univ. of West London, UK
Abstract :
This paper refines a “four-lane” physical model for CMOS devices, first published in 1994. The growth of threshold voltage as a function of radiation dose in a very wide range of Complementary Metal-Oxide-Semiconductor (CMOS) devices, all the way from low (kilorad) to very high (gigarad) doses. The parameters of four LANE-LIKE OR CORRIDOR-LIKE REGIONS on the growth curve diagram are extracted. The resulting FOUR-LANE CLASSIFICATION is useful in selecting CMOS technologies and offers a new terminology for describing the radiation tolerance of ICs and could form the basis of a “league table”, used to assess the performance of “hardening laboratories” around the world
Keywords :
CMOS integrated circuits; integrated circuit modelling; radiation hardening (electronics); CMOS device; IC; corridor-like region; four-lane model; growth curve; hardening; high-dose range; lane-like region; radiation tolerance; threshold voltage; Annealing; CMOS technology; Circuit testing; Logic testing; MOS devices; Predictive models; Radiation hardening; Semiconductor device modeling; Terminology; Threshold voltage;
Conference_Titel :
Radiation and its Effects on Components and Systems, 1995. RADECS 95., Third European Conference on
Conference_Location :
Arcachon
Print_ISBN :
0-7803-3093-5
DOI :
10.1109/RADECS.1995.509775
