Title :
Modeling of the pH-ChemFET response and using Genetic Algorithm as extraction parameters method
Author :
Naimi, S.E. ; Hajji, B. ; Habbani, Y. ; Humenyuk, I. ; Launay, J. ; Temple-Boyer, P.
Author_Institution :
Syst. et Dispositifs Micro-Nanoelectronique Team, Ecole Nat. des Sci. Appl., Oujda, Morocco
fDate :
May 30 2011-June 1 2011
Abstract :
This paper deals with the modeling of the temperature behavior of the pH-ChemFET sensor by taking into account the dependence with temperature of the reference electrode, insulator/electrolyte interface, test samples and the semiconductor part of pH-ChemFETs. Thus, the relationship of the dissociation constants Ka, Kb, at the SiO2/Si3N4/electrolyte interface, versus the temperature is simulated and the genetic algorithm is used as method for extraction and optimization of the main parameters of the pH-ChemFETs. The model developed is tested at different temperatures on large pH range, evidencing a good fit between simulation and experimental results.
Keywords :
chemical sensors; dissociation; electrodes; electrolytes; field effect transistors; genetic algorithms; pH measurement; dissociation constants; extraction parameters method; genetic algorithm; insulator-electrolyte interface; pH-ChemFET response; reference electrode; Electric potential; Genetic algorithms; MOSFET circuits; Temperature; Temperature measurement; Temperature sensors; Threshold voltage; Genetic algorithm; Thermal modeling; pH-ChemFET Sensor;
Conference_Titel :
Faible Tension Faible Consommation (FTFC), 2011
Conference_Location :
Marrakech
Print_ISBN :
978-1-61284-646-0
DOI :
10.1109/FTFC.2011.5948899
