• DocumentCode
    2200163
  • Title

    MOSBULK and MOSSOI Comparative study using BSIM 3V3.1-PSPICE

  • Author

    Djerioui, A. ; Chalabi, D. ; Saidane, A. ; Hannachi, Z.

  • fYear
    2011
  • fDate
    May 30 2011-June 1 2011
  • Firstpage
    111
  • Lastpage
    114
  • Abstract
    We present a comparative study between MOSBULK and MOSSOI obtained by superposing a MOS, an NPN and a capacitor. The BSIM3V3 model in PSPICE was used. ID=f(VDS) and ID=f(VGS) characteristics, conductance and transconductance are used to show that MOSSOI has a good low-power low voltage operation. Some inherent effects to MOSSOI are also underlined.
  • Keywords
    MOSFET; SPICE; electric admittance; low-power electronics; BSIM 3V3.1-PSPICE; MOSBULK; MOSSOI; conductance; low-power low voltage operation; transconductance; Capacitance; Logic gates; MOS devices; SPICE; Substrates; Threshold voltage; Transistors; BSIM3V3; FDSOI; MOS BULK; MOSSOI; PDSOI; parasitic transistor;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Faible Tension Faible Consommation (FTFC), 2011
  • Conference_Location
    Marrakech
  • Print_ISBN
    978-1-61284-646-0
  • Type

    conf

  • DOI
    10.1109/FTFC.2011.5948901
  • Filename
    5948901
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2200163