DocumentCode :
2200163
Title :
MOSBULK and MOSSOI Comparative study using BSIM 3V3.1-PSPICE
Author :
Djerioui, A. ; Chalabi, D. ; Saidane, A. ; Hannachi, Z.
fYear :
2011
fDate :
May 30 2011-June 1 2011
Firstpage :
111
Lastpage :
114
Abstract :
We present a comparative study between MOSBULK and MOSSOI obtained by superposing a MOS, an NPN and a capacitor. The BSIM3V3 model in PSPICE was used. ID=f(VDS) and ID=f(VGS) characteristics, conductance and transconductance are used to show that MOSSOI has a good low-power low voltage operation. Some inherent effects to MOSSOI are also underlined.
Keywords :
MOSFET; SPICE; electric admittance; low-power electronics; BSIM 3V3.1-PSPICE; MOSBULK; MOSSOI; conductance; low-power low voltage operation; transconductance; Capacitance; Logic gates; MOS devices; SPICE; Substrates; Threshold voltage; Transistors; BSIM3V3; FDSOI; MOS BULK; MOSSOI; PDSOI; parasitic transistor;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Faible Tension Faible Consommation (FTFC), 2011
Conference_Location :
Marrakech
Print_ISBN :
978-1-61284-646-0
Type :
conf
DOI :
10.1109/FTFC.2011.5948901
Filename :
5948901
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2200163
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