DocumentCode
2200347
Title
Simulation of a New Type of Oxide Confined 850 nm VCSEL
Author
Mitani, S.M. ; Alias, M.S. ; Choudhury, P.K.
Author_Institution
Optoelectron. Devices Unit, Telekom R&D Sdn Bhd., Selangor
fYear
2006
fDate
14-17 Nov. 2006
Firstpage
1
Lastpage
4
Abstract
The VCSEL design presented in this paper can suitably be operated in the 850 nm region of the electromagnetic spectrum. The reflection mirrors are made of AlGaAs layers. A better confinement of light is achieved by the introduction of an oxide confinement layer. PIC3D software is used to finally obtain various relevant results that greatly affect the performance of the device; the paper reports a few of them
Keywords
III-V semiconductors; aluminium compounds; gallium arsenide; semiconductor lasers; surface emitting lasers; 850 nm; AlGaAs; AlGaAs layers; VCSEL design; electromagnetic spectrum; reflection mirrors; Design engineering; Doping; Fabrication; Lattices; Optical arrays; Optoelectronic devices; Research and development; Software performance; Threshold current; Vertical cavity surface emitting lasers;
fLanguage
English
Publisher
ieee
Conference_Titel
TENCON 2006. 2006 IEEE Region 10 Conference
Conference_Location
Hong Kong
Print_ISBN
1-4244-0548-3
Electronic_ISBN
1-4244-0549-1
Type
conf
DOI
10.1109/TENCON.2006.344117
Filename
4142232
Link To Document