An integrated 100 MHz to 1 GHz I/Q modulator with CML phase shifter

Author

Hakkinen, Juha ; Rahkonen, Timo ; Kostamovaara, Juha

Author_Institution

Dept. of Electr. Eng., Oulu Univ., Finland

fYear

1996

fDate

13-14 Sep 1996

Firstpage

11

Lastpage

15

Abstract

A direct I/Q modulator suitable for operation at output frequencies from 100 MHz to 1 GHz and baseband frequencies from 60 to 500 kHz is fabricated in a 0.8 μm BiCMOS process. The modulator uses a phase shifter topology based on digital CML latches. The circuit operates from a single 5 V supply and it consumes about 100 mA. The circuit size is 2.0 mm×2.0 mm and it is packed in a 28 pin SOIC. According to measurements, the output power is -11±0.5 dBm at 100 MHz and -15± 2.25 dBm at 950 MHz over the temperature range of -10 to +85°C. LO suppression is roughly 38 dBc and image rejection 41 dBc

Keywords

BiCMOS digital integrated circuits; current-mode logic; modulators; phase shifters; 100 MHz to 1 GHz; BiCMOS integrated circuit; I/Q modulator; LO suppression; SOIC; digital CML latch; image rejection; phase shifter; Baseband; BiCMOS integrated circuits; Circuit topology; Digital modulation; Frequency; Latches; Phase modulation; Phase shifters; Power generation; Power measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

Analog and Mixed IC Design, 1996., IEEE-CAS Region 8 Workshop on

Conference_Location

Pavia

Print_ISBN

0-7803-3625-9

Type

conf

DOI

10.1109/AMICD.1996.569368

Filename

569368