DocumentCode
2200395
Title
Power MOSFETs hardened for single event effects (SEE) in space
Author
Carley, Donald R. ; Wheatley, C. Frank ; Titus, Jeff L. ; Burton, Donald I.
Author_Institution
Harris Semicond., Somerville, NJ, USA
fYear
1995
fDate
18-22 Sep 1995
Firstpage
253
Lastpage
257
Abstract
Measurements are presented for the single event effects and total dose responses of the newly introduced Harris “FS” series of space hardened power MOSFETs. The hardness appears to offer a breakthrough for commercial space requirements
Keywords
power MOSFET; radiation hardening (electronics); space vehicle electronics; Harris FS series; commercial space requirements; power MOSFETs; single event effects; space hardened devices; total dose responses; Cranes; Insulation; MOSFETs; Packaging; Plasma temperature; Power measurement; Radiation hardening; Road transportation; Voltage; Weapons;
fLanguage
English
Publisher
ieee
Conference_Titel
Radiation and its Effects on Components and Systems, 1995. RADECS 95., Third European Conference on
Conference_Location
Arcachon
Print_ISBN
0-7803-3093-5
Type
conf
DOI
10.1109/RADECS.1995.509786
Filename
509786
Link To Document