Title :
Single event effect characteristics of CMOS devices employing various epi-layer thicknesses
Author :
LaBel, Kenneth A. ; Hawkins, Donald K. ; Kinnison, James A. ; Stapor, William P. ; Marshall, Paul W.
Author_Institution :
NASA Goddard Space Flight Center, Greenbelt, MD, USA
Abstract :
Latchup resistant process, combined with SEU mitigation circuitry, may provide sufficient protection for many satellite applications. We report proton and heavy ion cross section measurements to illustrate the epitaxial layer thickness dependence on a First-in, First-out (FIFO) memory and microprocessor devices fabricated in a commercial CMOS/EPI process
Keywords :
CMOS digital integrated circuits; integrated circuit measurement; ion beam effects; ion beams; proton effects; space vehicle electronics; CMOS devices; CMOS/EPI process; FIFO memory; SEU mitigation circuitry; epi-layer thicknesses; heavy ion cross section measurements; latchup resistant process; microprocessor devices; proton cross section measurements; satellite applications; single event effect characteristics; CMOS process; Central Processing Unit; Epitaxial layers; Laboratories; Protection; Protons; Single event upset; Space vehicles; Testing; Thickness measurement;
Conference_Titel :
Radiation and its Effects on Components and Systems, 1995. RADECS 95., Third European Conference on
Conference_Location :
Arcachon
Print_ISBN :
0-7803-3093-5
DOI :
10.1109/RADECS.1995.509787
