Title :
173nA-7.5ppm/°C-771mV-0.03mm2 CMOS resistorless voltage reference
Author :
Samir, A. ; Girardeau, L. ; Bert, Y. ; Kussener, E. ; Rahajandraibe, W. ; Barthelemy, H.
Author_Institution :
STMicroelectronics, Z.I. Rousset-Peynier, France
fDate :
May 30 2011-June 1 2011
Abstract :
A low power voltage reference generator operating with a supply voltage ranging from 1.6V to 3.6V has been implemented in a 90-nm standard CMOS process. The reference is based on MOSFETs biased in the weak inversion region to consume nanowatts of power and uses no resistors. The maximum supply current at 3.6V and at 125°C is 173nA. It provides an 771mV voltage reference. A temperature coefficient of 7.5ppm/°C is achieved at best and 39.5ppm/°C on average, in a range from -40 to 125°C, as the combined effect of a suppression of the temperature dependence of mobility and the compensation of the threshold voltage temperature variation. The total block area is 0.03mm2.
Keywords :
CMOS integrated circuits; low-power electronics; reference circuits; CMOS resistorless voltage reference; MOSFET; current 173 nA; low power voltage reference generator; size 90 nm; temperature 125 C; threshold voltage temperature variation; voltage 1.6 V to 3.6 V; voltage 3.6 V; voltage 771 mV; CMOS integrated circuits; Generators; MOSFETs; Temperature dependence; Temperature measurement; Threshold voltage; Voltage measurement; CMOS voltage reference; ULP; process trimming management; sub-threshold; temperature compensation; weak inversion;
Conference_Titel :
Faible Tension Faible Consommation (FTFC), 2011
Conference_Location :
Marrakech
Print_ISBN :
978-1-61284-646-0
DOI :
10.1109/FTFC.2011.5948922
