Title :
A new approach to the analysis of SEU and SEL data to obtain the sensitive volume thickness [ICs]
Author :
Barak, J. ; Levinson, J. ; Akkerman, A. ; Hass, M. ; Victoria, M. ; Zentner, A. ; David, D. ; Even, O. ; Lifshitz, Y.
Author_Institution :
Soreq Nucl. Res. Center, Yavne, Israel
Abstract :
It is proposed to use short-range ions (along with long-range ions) to obtain the thickness of the sensitive volume, d, and the SEU (single event upset) and SEL (single event latchup) cross sections vs the energy deposited in this volume, σion(ε). These σion(ε) and d can be used for calculating the proton induced cross sections σp. A study of the HM65162 CMOS SRAM demonstrates this method. The calculated σp is in good agreement with the experimental σp
Keywords :
CMOS memory circuits; SRAM chips; digital integrated circuits; ion beam effects; monolithic integrated circuits; HM65162 CMOS SRAM; SEL data analysis; SEU data analysis; long-range ions; proton induced cross sections; sensitive volume thickness; short-range ions; single event latchup; single event upset; Acceleration; Electrostatics; Energy exchange; Ion accelerators; Proton accelerators; Silicon; Single event upset; Testing; Thickness measurement; Volume measurement;
Conference_Titel :
Radiation and its Effects on Components and Systems, 1995. RADECS 95., Third European Conference on
Conference_Location :
Arcachon
Print_ISBN :
0-7803-3093-5
DOI :
10.1109/RADECS.1995.509797
