DocumentCode
2200772
Title
Dynamic single event effects in a CMOS/thick SOI shift register
Author
Gardic, F. ; Flament, O. ; Musseau, O. ; Brisset, C. ; Martinez, M. ; Brunet, J.P. ; Blanquart, E.
Author_Institution
CEA, Centre d´´Etudes de Bruyeres-le-Chatel, France
fYear
1995
fDate
18-22 Sep 1995
Firstpage
333
Lastpage
339
Abstract
We describe transient effects induced by high energy protons in shift registers processed in a CMOS/thick SOI technology. Devices are tested in dynamic mode. The dependence of cross section on frequency, signal rise time, angle of incidence and proton energy is studied and interpreted
Keywords
CMOS logic circuits; flip-flops; proton effects; shift registers; silicon-on-insulator; transient analysis; CMOS/thick SOI technology; Si; angle of incidence; cross section dependence; dynamic single event effects; frequency; high energy protons; proton energy; shift register; signal rise time; transient effects; CMOS process; CMOS technology; Clocks; Electronic components; Flip-flops; Frequency; Protons; Shift registers; Space technology; Testing;
fLanguage
English
Publisher
ieee
Conference_Titel
Radiation and its Effects on Components and Systems, 1995. RADECS 95., Third European Conference on
Conference_Location
Arcachon
Print_ISBN
0-7803-3093-5
Type
conf
DOI
10.1109/RADECS.1995.509799
Filename
509799
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