Title :
Dynamic single event effects in a CMOS/thick SOI shift register
Author :
Gardic, F. ; Flament, O. ; Musseau, O. ; Brisset, C. ; Martinez, M. ; Brunet, J.P. ; Blanquart, E.
Author_Institution :
CEA, Centre d´´Etudes de Bruyeres-le-Chatel, France
Abstract :
We describe transient effects induced by high energy protons in shift registers processed in a CMOS/thick SOI technology. Devices are tested in dynamic mode. The dependence of cross section on frequency, signal rise time, angle of incidence and proton energy is studied and interpreted
Keywords :
CMOS logic circuits; flip-flops; proton effects; shift registers; silicon-on-insulator; transient analysis; CMOS/thick SOI technology; Si; angle of incidence; cross section dependence; dynamic single event effects; frequency; high energy protons; proton energy; shift register; signal rise time; transient effects; CMOS process; CMOS technology; Clocks; Electronic components; Flip-flops; Frequency; Protons; Shift registers; Space technology; Testing;
Conference_Titel :
Radiation and its Effects on Components and Systems, 1995. RADECS 95., Third European Conference on
Conference_Location :
Arcachon
Print_ISBN :
0-7803-3093-5
DOI :
10.1109/RADECS.1995.509799
