Analysis of local and global transient effects in a CMOS SRAM

Author

Gardic, F. ; Musseau, O. ; Flament, O. ; Brisset, C. ; Ferlet-Cavrois, V. ; Martinez, M. ; Corbière, T.

Author_Institution

CEA, Centre d´´Etudes de Bruyeres-le-Chatel, France

fYear

1995

fDate

18-22 Sep 1995

Firstpage

346

Lastpage

353

Abstract

We have studied the sensitivity of a 256 kbit CMOS/epi SRAM to transient phenomena (protons and ions SEU, dose rate). Local and global failure mechanisms are observed and discussed. For single particles, or at low dose rate, cell upsets are uncorrelated. When the dose rate is increased, correlated failures are due to both cell photocurrent summation (rail span collapse) and supply voltage drop in peripheral circuits. The transition between uncorrelated to correlated failures is interpreted, on the basis of device structure and pattern influence

Keywords

CMOS memory circuits; SRAM chips; failure analysis; integrated circuit reliability; ion beam effects; proton effects; sensitivity analysis; 256 kbit; CMOS SRAM; cell photocurrent summation; dose rate; failure mechanisms; global transient effects; ions SEU; local transient effects; peripheral circuits; protons; rail span collapse; supply voltage drop; transient phenomena sensitivity; Failure analysis; Optical pulse generation; Photoconductivity; Protons; Rails; Random access memory; Single event upset; Testing; Transient analysis; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Radiation and its Effects on Components and Systems, 1995. RADECS 95., Third European Conference on

Conference_Location

Arcachon

Print_ISBN

0-7803-3093-5

Type

conf

DOI

10.1109/RADECS.1995.509801

Filename

509801