Title :
Analysis of local and global transient effects in a CMOS SRAM
Author :
Gardic, F. ; Musseau, O. ; Flament, O. ; Brisset, C. ; Ferlet-Cavrois, V. ; Martinez, M. ; Corbière, T.
Author_Institution :
CEA, Centre d´´Etudes de Bruyeres-le-Chatel, France
Abstract :
We have studied the sensitivity of a 256 kbit CMOS/epi SRAM to transient phenomena (protons and ions SEU, dose rate). Local and global failure mechanisms are observed and discussed. For single particles, or at low dose rate, cell upsets are uncorrelated. When the dose rate is increased, correlated failures are due to both cell photocurrent summation (rail span collapse) and supply voltage drop in peripheral circuits. The transition between uncorrelated to correlated failures is interpreted, on the basis of device structure and pattern influence
Keywords :
CMOS memory circuits; SRAM chips; failure analysis; integrated circuit reliability; ion beam effects; proton effects; sensitivity analysis; 256 kbit; CMOS SRAM; cell photocurrent summation; dose rate; failure mechanisms; global transient effects; ions SEU; local transient effects; peripheral circuits; protons; rail span collapse; supply voltage drop; transient phenomena sensitivity; Failure analysis; Optical pulse generation; Photoconductivity; Protons; Rails; Random access memory; Single event upset; Testing; Transient analysis; Voltage;
Conference_Titel :
Radiation and its Effects on Components and Systems, 1995. RADECS 95., Third European Conference on
Conference_Location :
Arcachon
Print_ISBN :
0-7803-3093-5
DOI :
10.1109/RADECS.1995.509801
