DocumentCode
2200921
Title
Simulation of heavy ion latchup cross section curves
Author
De la Rochette, Hélène ; Bruguier, Guy ; Palau, Jean-Marie ; Gasiot, Jean ; Ecoffet, Robert
Author_Institution
Matra Marconi Space, Velizy-Villacoublay, France
fYear
1995
fDate
18-22 Sep 1995
Firstpage
359
Lastpage
364
Abstract
The latchup sensitivity of 1 μm CMOS structures when subjected to heavy ion irradiation is studied. Cross section curves and threshold LETs obtained by 2D and 3D device simulations are compared to the experimental results
Keywords
CMOS integrated circuits; integrated circuit modelling; ion beam effects; 1 micron; 2D device; 3D device; CMOS structure; cross section curve; heavy ion irradiation; latchup sensitivity; simulation; threshold LET; Analytical models; Circuit simulation; Logic testing; Medical simulation; Random access memory; SPICE;
fLanguage
English
Publisher
ieee
Conference_Titel
Radiation and its Effects on Components and Systems, 1995. RADECS 95., Third European Conference on
Conference_Location
Arcachon
Print_ISBN
0-7803-3093-5
Type
conf
DOI
10.1109/RADECS.1995.509803
Filename
509803
Link To Document