Title :
Simulation of heavy ion latchup cross section curves
Author :
De la Rochette, Hélène ; Bruguier, Guy ; Palau, Jean-Marie ; Gasiot, Jean ; Ecoffet, Robert
Author_Institution :
Matra Marconi Space, Velizy-Villacoublay, France
Abstract :
The latchup sensitivity of 1 μm CMOS structures when subjected to heavy ion irradiation is studied. Cross section curves and threshold LETs obtained by 2D and 3D device simulations are compared to the experimental results
Keywords :
CMOS integrated circuits; integrated circuit modelling; ion beam effects; 1 micron; 2D device; 3D device; CMOS structure; cross section curve; heavy ion irradiation; latchup sensitivity; simulation; threshold LET; Analytical models; Circuit simulation; Logic testing; Medical simulation; Random access memory; SPICE;
Conference_Titel :
Radiation and its Effects on Components and Systems, 1995. RADECS 95., Third European Conference on
Conference_Location :
Arcachon
Print_ISBN :
0-7803-3093-5
DOI :
10.1109/RADECS.1995.509803
